| 摘要 |
<p>Provided are a semiconductor device and manufacturing method thereof, the semiconductor device comprising: a semiconductor substrate (101), a well region (102) in the semiconductor substrate (101), a contact region (109) in the well region (102), a sandwich structure located on the well region (102), a front-gate stack intersecting with semiconductor fins (103'), an insulation cap (107') located above a metal back-gate (110) and the semiconductor fins (103'), and a source region and a drain region connected with a channel region provided by the semiconductor fins (103'). The sandwich structure comprises the metal back-gate (110), the semiconductor fins (103') located on the two sides of the metal back-gate (110), and respective back-gate dielectrics (108) each isolating the metal back-gate (110) from the semiconductor fins (103'); the contact region (109) and the well region (102) are part of the conductive path of the metal back-gate (110), and the metal back-gate (110) is connected to the well region (102) via the contact region (109); the front-gate stack comprises a front-gate dielectric (113) and a front-gate conductor (114), and the front-gate dielectric (113) isolates the front-gate conductor (114) from the semiconductor fins (103'); and the insulation cap (107') isolates the metal back-gate (110) from the front-gate conductor (114). The semiconductor device realizes high integration and low power consumption.</p> |
