| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of accurately changing a resistance value of a variable resistive element.SOLUTION: When a plurality of variable resistive elements connected to a selected first wire are selected, a control circuit executes a reading operation of detecting a voltage of the selected first wire. The control circuit adjusts a voltage applied to the first wire selected in a reset operation or a set operation based on the voltage of the first wire detected and selected by the reading operation. The reset operation is an operation of increasing a resistance value of the variable resistive element. The set operation is an operation of lowering the resistance value of the variable resistive element. |
