发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.
申请公布号 US8800484(B2) 申请公布日期 2014.08.12
申请号 US200913003102 申请日期 2009.06.16
申请人 Tokyo Electron Limited 发明人 Matsumoto Naoki;Kato Kazuyuki;Shikata Masafumi;Takai Kazuto
分类号 C23C16/511;H01L21/67;H01J37/32;H01L21/687;C23F1/00 主分类号 C23C16/511
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A plasma processing apparatus comprising: a processing container in which a plasma processing is performed on a substrate to be processed; a holding stage which is disposed in the processing container and holds thereon the substrate to be processed; a microwave generator which generates a microwave for exciting plasma; a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, the dielectric plate having a bottom surface facing the holding stage; a base housing portion, which penetrates an upper portion of the dielectric plate in a plate vertical thickness direction; and a reactive gas supply unit which supplies a reactive gas for plasma processing toward a central region of the substrate to be processed held by the holding stage, wherein the reactive gas supply unit includes an injector base, which is housed inside the base housing portion, and has a wall surface exposed to the inside of the processing container and directly open toward the holding stage and a supply hole formed in the wall surface, a reactive gas being supplied into the processing container through the supply hole, the wall surface and the supply hole being positioned vertically above the bottom surface of the dielectric plate, and a seal provided between an inner wall of the base housing portion and the wall surface of the injector base.
地址 JP
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