Stacked MRAM device and memory system having the same

摘要

Provided is a stacked magnetic random access memory (MRAM) in which memory cell arrays having various characteristics or functions are included in memory cell layers. The stacked MRAM device includes a semiconductor substrate and at least one memory cell layers. The semiconductor substrate includes a first memory cell array. Each of the memory cell layers includes a memory cell array having a different function from the first memory cell array and is stacked on the first memory cell array. As a result, the stacked MRAM device has high density, high performance, and high reliability.

主权项

1. A stacked magnetic random access memory (MRAM) device comprising:
a semiconductor substrate including a first memory cell array including normal data cells configured to store data; a second memory cell array disposed on the first memory cell array, the second memory cell array including error-correction code (ECC) cells configured to store ECC data or reference cells configured to store reference resistances; and one or more additional memory cell arrays including at least a third memory cell array including one-time programming (OTP) cells to store data only one time, wherein the third memory cell array is stacked on the second memory cell array.