Semiconductor device and manufacturing method of the same

摘要

With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.

主权项

1. A semiconductor device comprising:
a semiconductor circuit over a first insulator; an antenna electrically connected to the semiconductor circuit; a second insulator over the semiconductor circuit; a conductive film over the second insulator; and a third insulator over the conductive film, wherein the conductive film is electrically isolated from the semiconductor circuit, and wherein the first insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa.