| 发明名称 | Low cost metal-insulator-metal capacitors | ||
| 摘要 | A device includes a top metal layer over a substrate; a copper-containing metal feature in the top metal layer; a passivation layer over the top metal layer; and a capacitor. The capacitor includes a bottom electrode including at least a portion in the first passivation layer, wherein the bottom electrode includes aluminum; an insulator over the bottom electrode; and a top electrode over the insulator. | ||
| 申请公布号 | US8803286(B2) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201012940523 | 申请日期 | 2010.11.05 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Jou Chewn-Pu;Lu Tse-Hua |
| 分类号 | H01L29/92 | 主分类号 | H01L29/92 |
| 代理机构 | Slater and Matsil, L.L.P. | 代理人 | Slater and Matsil, L.L.P. |
| 主权项 | 1. A device comprising: a substrate; a top metal layer over the substrate; a copper-containing metal feature in the top metal layer; a first passivation layer over the top metal layer; and a capacitor comprising: a bottom electrode comprising at least a portion in the first passivation layer, wherein the bottom electrode comprises aluminum;an insulator over the bottom electrode, wherein the insulator comprises an edge overlying the first passivation layer; anda top electrode over the insulator, wherein the top electrode extends beyond the edge of the insulator, and wherein the top electrode comprises a bottom contacting a top surface of the first passivation layer. | ||
| 地址 | Hsin-Chu TW | ||