发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD OF DEPOSITING A FILM |
摘要 |
A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions. |
申请公布号 |
US2014220260(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201414171928 |
申请日期 |
2014.02.04 |
申请人 |
Tokyo Electron Limited |
发明人 |
Yamawaku Jun;Koshimizu Chishio;Tachibana Mitsuhiro;Kato Hitoshi;Kobayashi Takeshi;Miura Shigehiro;Kimura Takafumi |
分类号 |
C23C16/50 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing apparatus for performing a plasma process for substrates inside a vacuum chamber, the substrate processing apparatus comprising:
a turntable which includes substrate mounting portions for mounting the substrates formed at a plurality of positions along a peripheral direction of the vacuum chamber and causes the substrate mounting portions to orbitally revolve around; a plasma generating gas supplying portion which supplies a plasma generating gas into a plasma generating area for performing the plasma process for the substrates; an energy supplying portion which supplies energy to the plasma generating gas in order to change the plasma generating gas to plasma; a bias electrode which is provided on a lower side of the turntable so as to face the plasma generating area and leads ions included in the plasma onto surfaces of the wafers; and an evacuation port which evacuates an inside of the vacuum chamber, wherein the bias electrode is formed so as to extend from a side of a rotational center of the turntable to an outer edge side of the turntable, and a width of the bias electrode in a rotational direction of the turntable is smaller than a distance between adjacent substrate mounting portions included in the substrate mounting portions. |
地址 |
Tokyo JP |