发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF DEPOSITING A FILM
摘要 A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.
申请公布号 US2014220260(A1) 申请公布日期 2014.08.07
申请号 US201414171928 申请日期 2014.02.04
申请人 Tokyo Electron Limited 发明人 Yamawaku Jun;Koshimizu Chishio;Tachibana Mitsuhiro;Kato Hitoshi;Kobayashi Takeshi;Miura Shigehiro;Kimura Takafumi
分类号 C23C16/50 主分类号 C23C16/50
代理机构 代理人
主权项 1. A substrate processing apparatus for performing a plasma process for substrates inside a vacuum chamber, the substrate processing apparatus comprising: a turntable which includes substrate mounting portions for mounting the substrates formed at a plurality of positions along a peripheral direction of the vacuum chamber and causes the substrate mounting portions to orbitally revolve around; a plasma generating gas supplying portion which supplies a plasma generating gas into a plasma generating area for performing the plasma process for the substrates; an energy supplying portion which supplies energy to the plasma generating gas in order to change the plasma generating gas to plasma; a bias electrode which is provided on a lower side of the turntable so as to face the plasma generating area and leads ions included in the plasma onto surfaces of the wafers; and an evacuation port which evacuates an inside of the vacuum chamber, wherein the bias electrode is formed so as to extend from a side of a rotational center of the turntable to an outer edge side of the turntable, and a width of the bias electrode in a rotational direction of the turntable is smaller than a distance between adjacent substrate mounting portions included in the substrate mounting portions.
地址 Tokyo JP