SiC SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a 4H-SiC/SiOinsulating film interface having a high mobility, and to improve element characteristics.SOLUTION: An SiC semiconductor device using a 4H-SiC substrate, comprises: a p-type 4H-SiC region 121 formed to at least a part of a surface part of SiC substrates 100 and 102; a defect reduction layer 124 by carbon doping formed on a surface part of the 4H-SiC region 121; a pair structure insulating film 125 formed by doping the n-type impurity on the defect reduction layer 124, and having a pn-doped pair at one Si lattice point; a gate insulating film 130 formed on the pair structure insulating film 125; and a gate electrode 140 formed on the gate insulating film 130.