Hardmask

摘要

Compositions containing certain organometallic oligomers suitable for use as spin-on, metal hardmasks are provided, where such compositions can be tailored to provide a metal oxide hardmask having a range of etch selectivity. Also provided are methods of depositing metal oxide hardmasks using the present compositions.

主权项

1. A process for manufacturing an electronic device comprising: (a) providing an electronic device substrate; (b) disposing a layer of an organometallic oligomer on the electronic device substrate; and (c) curing the organometallic oligomer to form a metal oxide layer on the electronic device substrate; wherein the organometallic oligomer is chosen from: (i) an oligomer comprising metal-containing pendant groups; (ii) an oligomer of formula (2)where R2═(C1-C6)alkyl; M1 is a Group 3 to Group 14 metal; R3═(C2-C6)alkylene-X— or (C2-C6)alkylidene-X—; each X is independently chosen from O and S; z is an integer from 1-5; L1 is a ligand; m refers to the number of ligands and is an integer from 1-4; and p=an integer from 2 to 25; or (iii) mixtures thereof.