SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF

摘要

Disclosed is a driving method for improving write operation characteristics in a volatile semiconductor memory such as a DRAM. The driving method of a semiconductor memory device includes receiving an access command and setting word lines that are adjacent to a word line to be accessed to a voltage level for inducing a passing gate effect. In addition, an activation voltage for accessing operation is applied to the word line to be accessed. Thus, the write operation characteristics are improved from passing gate effects in a set low temperature region.