SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reduce 1/f noise even when a gate insulation film of a transistor is thin.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a second gate oxide film 11 having a film thickness of 6.5 nm and under on a silicon substrate 1; a process of depositing a gate electrode film 13 on the second gate oxide film 11; a process of performing high-temperature annealing at 965°C and over on the silicon substrate 1 after depositing the gate electrode film 13; and a process of patterning the gate electrode film 13 after performing the high-temperature annealing on the silicon substrate 1 to form a second gate electrode 17 composed of the gate electrode film 13 on the second gate oxide film 11.