| 主权项 |
1. A Hall element disposed over a substrate, the Hall element comprising:
an N-type epitaxial layer disposed over the substrate; a plurality of pickups implanted and diffused into the epitaxial layer, adjacent pairs of the plurality of pickups separated by separation regions, each one of the plurality of pickups comprising a respective N+ type diffusion; and a low-voltage P-well region implanted and diffused into the epitaxial layer, wherein a diffusion depth of the low voltage P-well region is less than a diffusion depth of a P-well region in the same semiconductor process, wherein the low-voltage P-well region extends into the separation regions, wherein the Hall element is configured to generate a Hall voltage between at least one pair of the plurality of pickups, wherein the Hall voltage is most responsive to a magnetic field directed parallel to a major surface of the substrate. |
