| 发明名称 |
LOCALLY ACTIVE MEMRISTIVE DEVICE |
| 摘要 |
A method to operate an integrated circuit includes operating a locally active memristive device in a locally reactive region of an operating domain where the device exhibits inductor-like behavior, such as a phase shift where a voltage across the device leads a current through the device. |
| 申请公布号 |
US2014211534(A1) |
申请公布日期 |
2014.07.31 |
| 申请号 |
US201313753511 |
申请日期 |
2013.01.29 |
| 申请人 |
HEWLETT-PARKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
Pickett Matthew D.;Williams R. Stanley |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1: An integrated circuit, comprising:
a substrate; semiconductor devices over the substrate, the semiconductor devices including a locally active memristive device operated in a locally reactive domain to exhibit inductor-like behavior. |
| 地址 |
Houston TX US |
