发明名称 DOPANT FEEDER FOR SINGLE CRYSTAL MANUFACTURING EQUIPMENT
摘要 The present invention relates to a dopant feeder for a single crystal manufacturing apparatus that can input a low-melting-point dopant into silicon melt stably and uniformly even if the low-melting-point dopant is liquefied or gasified. The present invention provides a dopant feeder for a single crystal manufacturing apparatus, comprising: a crucible for containing silicon melt; a loader having a dopant to be doped with the silicon melt mounted thereon and including holes for guiding the liquefied dopant to flow down; a cover for accommodating the loader and guiding the dopant gasified from the loader into the silicon melt; and an elevation part for elevating the cover and the loader to approach the silicon melt at the side of the crucible.
申请公布号 KR20140094803(A) 申请公布日期 2014.07.31
申请号 KR20130007291 申请日期 2013.01.23
申请人 LG SILTRON INCORPORATED 发明人 YOON, YONG KYOON;LEE, SANG JUN;KIM, JUNG RYUL
分类号 C30B15/04;C30B29/06 主分类号 C30B15/04
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