| 摘要 |
Disclosed is a method for treating a copper containing structure on a substrate. The method comprises: a step of electrodepositing the copper containing structure on the substrate; a step of annealing the copper containing structure; and a step of forming an interface between the pad and the solder structure of the copper containing structure after the step of annealing the copper containing structure. The interface can have an improved resistance for interface voiding. The copper containing structure is formed to transmit electric current between at least one port and at least one of the solder structures in an integrated circuit package. In the step of annealing the copper containing structure, impurities and vacancies can be moved to the surface of the copper containing structure so that the impurities and the vacancies can be removed subsequently. |
