DEPOSITION DEVICE, SUBSTRATE PROCESSING DEVICE AND DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To perform a plasma modification treatment achieving high uniformity in a direction of a depth of a recess on a substrate surface when performing a deposition process by using a process gas to a substrate which orbits by a rotary table.SOLUTION: A deposition device comprises: a plasma treatment part 80 which is arranged at a distance from each of process gas nozzles 31, 32 in a rotation direction of a rotary table 2; and a bias electrode part 120 arranged at a position facing the plasma treatment part 80 across the rotary table 2 so as not to contact the rotary table 2. A bias voltage is applied from a bias voltage application part 128 to the bias electrode part 120 thereby to apply the bias voltage to a wafer W on the rotary table 2 in a non-contact manner.