| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon on insulator structure having a device layer including an axisymmetric domain of width in the substantially radial direction, which does not substantially contain a defect resulting from hole of crystal lattice or aggregation of self-interstitial atoms of silicon.SOLUTION: A silicon on insulator (SOI) structure having a handle wafer that has a device layer of low defect density and an improved gettering capability, as required, is provided. The device layer has a central axis, peripheral edge, a radius extending from the central axis to the peripheral edge, and a first axisymmetric domain substantially not containing aggregated intrinsic point defect. The invention is also related to a SOI structure having a handle wafer of Czochralski single crystal silicon which allows for formation of an ideal depth distribution where the oxygen deposit is not uniform when it is subjected to the heat treatment cycle of essentially any electronic device manufacturing process. |
