| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for using a sputtering target which enables an oxide film with a high degree of crystallinity, the oxide film containing a plurality of metal elements, to be formed.SOLUTION: This invention provides a method for using a sputtering target including a polycrystalline oxide containing a plurality of crystal grains. The crystal grains includes a cleavage plane. An ion is made to collide with the sputtering target, to separate sputtered particles from each cleavage plane. The sputtered particles are positively charged, so that the sputtered particles are deposited uniformly on a deposition surface while repelling each other. |
