| 发明名称 |
Method of forming conformal metal silicide films |
| 摘要 |
A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios. |
| 申请公布号 |
US8785310(B2) |
申请公布日期 |
2014.07.22 |
| 申请号 |
US201213427343 |
申请日期 |
2012.03.22 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Hasegawa Toshio;Tada Kunihiro;Yamasaki Hideaki;O'Meara David L.;Leusink Gerrit J. |
| 分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a metal silicide layer on a substrate, comprising:
a) providing the substrate in a process chamber; b) exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, wherein the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process; and c) exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, wherein b) and c) are alternatively performed at least once to form the metal silicide layer, and wherein the deposition gas does not contain the reducing gas. |
| 地址 |
Tokyo JP |
