| 摘要 |
Provided are a sulfonium salt used in a resist composition which gives a pattern having a high resolution, in particular, an excellent rectangularity of a pattern shape, and small roughness in the photolithography using a high energy beam such as ArF excimer laser light, EUV, etc. as a light source, and further which is difficult to be eluted in water in the immersion lithography, and a resist composition containing the sulfonium salt, and a patterning process using the resist composition, wherein the sulfonium salt is represented by the following general formula (1a), wherein R represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms of which one or more hydrogen atoms are substituted by a fluorine atom, and R0 represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be substituted by a heteroatom, or interposed by a heteroatom. |
