发明名称 POST-PASSIVATION INTERCONNECT STRUCTURE AND METHODS FOR FORMING THE SAME
摘要 A method according to an embodiment includes forming a polymer layer over a passivation layer, wherein the passivation layer further comprises a portion over a metal pad. The polymer layer is patterned to form an opening in the polymer layer, wherein exposed surfaces of the polymer layer have a first roughness. A surface treatment is performed to increase a roughness of the polymer layer to a second roughness greater than the first roughness. A metallic feature is formed over the exposed surface of the polymer layer.
申请公布号 KR20140090531(A) 申请公布日期 2014.07.17
申请号 KR20130039199 申请日期 2013.04.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 TU CHIA WEI;KUO YIAN LIANG;HSIEH WEI LUN;TSAI TSUNG FU
分类号 H01L21/60 主分类号 H01L21/60
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