发明名称 |
POST-PASSIVATION INTERCONNECT STRUCTURE AND METHODS FOR FORMING THE SAME |
摘要 |
A method according to an embodiment includes forming a polymer layer over a passivation layer, wherein the passivation layer further comprises a portion over a metal pad. The polymer layer is patterned to form an opening in the polymer layer, wherein exposed surfaces of the polymer layer have a first roughness. A surface treatment is performed to increase a roughness of the polymer layer to a second roughness greater than the first roughness. A metallic feature is formed over the exposed surface of the polymer layer. |
申请公布号 |
KR20140090531(A) |
申请公布日期 |
2014.07.17 |
申请号 |
KR20130039199 |
申请日期 |
2013.04.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TU CHIA WEI;KUO YIAN LIANG;HSIEH WEI LUN;TSAI TSUNG FU |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|