| 发明名称 |
NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD |
| 摘要 |
A nitride semiconductor crystal producing method, includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal. |
| 申请公布号 |
US2014196660(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201414163967 |
申请日期 |
2014.01.24 |
| 申请人 |
Hitachi Metals, Ltd. |
发明人 |
FUJIKURA Hajime;KONNO Taichiroo;OSHIMA Yuichi |
| 分类号 |
C30B25/02 |
主分类号 |
C30B25/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nitride semiconductor crystal producing method, comprising:
growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal. |
| 地址 |
Tokyo JP |
