发明名称 |
Compound semiconductor device and manufacturing method therefor |
摘要 |
An HEMT includes, on an SiC substrate (1), a compound semiconductor layer (2), a silicon nitride (SiN) protective film (6) having an opening (6b) and covering the compound semiconductor layer, and a gate electrode (7) formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion (6a). |
申请公布号 |
EP2575179(A3) |
申请公布日期 |
2014.07.16 |
申请号 |
EP20120177567 |
申请日期 |
2012.07.24 |
申请人 |
FUJITSU LIMITED |
发明人 |
MAKIYAMA, KOZO;OKAMOTO, NAOYA;OHKI, TOSHIHIRO;MINOURA, YUICHI;OZAKI, SHIROU;MIYAJIMA, TOYOO |
分类号 |
H01L29/778;H01L29/66 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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