Continuous programming of non-volatile memory

摘要

A system connects a signal driver to a first control line that is connected to a first non-volatile storage element, charges the first control line while the signal driver is connected to the first control line, disconnects the signal driver from the first control line while the first control line remains charged from the signal driver, connects the signal driver to a second control line that is connected to a second non-volatile storage element, charges the second control line using the signal driver while the signal driver is connected to the second control line, and disconnects the signal driver from the second control line. The disconnecting of the signal driver from the first control line, the connecting the signal driver to the second control line and the charging of the second control line are performed without waiting for the first non-volatile storage element's program operation to complete.

主权项

1. A non-volatile storage apparatus, comprising:
a monolithic three-dimensional memory array including a first non-volatile storage element and a second non-volatile storage element; and one or more control circuits in communication with the first non-volatile storage element and the second non-volatile storage element, the one or more control circuits perform and complete a program operation for the first non-volatile storage element using a first source of charge by connecting a control line for the first non-volatile storage element to the first source of charge at a first time, the one or more control circuits perform and complete a program operation for the second non-volatile storage element using the first source of charge by connecting a control line for the second non-volatile storage element to the first source of charge at a second time that is subsequent to the first time, the program operation for the first non-volatile storage element of the monolithic three-dimensional memory array is performed concurrently with the program operation for the second non-volatile storage element of the monolithic three-dimensional memory array.