| 发明名称 | Method for manufacturing semiconductor device | ||
| 摘要 | In a method for manufacturing a semiconductor device, an opening formed in a semiconductor substrate by using a mask and covering an inner side face of the opening with a sidewall protective film. The mask is removed, while a part of the sidewall protective film remains. | ||
| 申请公布号 | US8778805(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US201213361103 | 申请日期 | 2012.01.30 |
| 申请人 | PS4 Luxco S.A.R.L. | 发明人 | Fujii Seiya |
| 分类号 | H01L21/311 | 主分类号 | H01L21/311 |
| 代理机构 | Young & Thompson | 代理人 | Young & Thompson |
| 主权项 | 1. A method for manufacturing a semiconductor device, comprising: forming an opening in a semiconductor substrate by using a mask, the opening having an inner side face comprising a concave shape, and covering the inner side face of the opening with a sidewall protective film; and removing the mask, while a part of the sidewall protective film remains inside the concave shape in the inner side face of the opening. | ||
| 地址 | Luxembourg LU | ||