| 摘要 |
<p>A laminated semiconductor package using an interposer according to the present invention includes a main substrate; a first interposer which is arranged on the main substrate and has a stepped part; a plurality of first semiconductor packages which is arranged in the stepped part of the first interposer; a second interposer which is formed on the first interposer having the first semiconductor packages; and second semiconductor packages which are arranged on the second interposer. The present invention prevents a wafer from being bent due to the coefficient of thermal expansion and improves reliability of a bonding part and a radiating effect by forming the laminated semiconductor package using a silicon interposer substrate.</p> |
