发明名称 A NON-VOLATILE MEMORY CELL HAVING A FLOATING GATE AND A COUPLING GATE WITH IMPROVED COUPLING RATIO THEREBETWEEN
摘要 A non-volatile memory cell having a split gate, wherein the floating gate and the coupling/control gate have complimentary non-planar shapes. The shape may be a step shape. An array of such cells and a method of manufacturing the cells are also disclosed.
申请公布号 EP2751840(A1) 申请公布日期 2014.07.09
申请号 EP20120828535 申请日期 2012.07.16
申请人 SILICON STORAGE TECHNOLOGY INC. 发明人 WANG, CHUNMING;QIAO, BAOWEI;ZHANG, ZUFA;ZHANG, YI;WANG, SHIUH, LUEN;LU, WEN-JUEI
分类号 H01L29/788;H01L21/28;H01L27/115;H01L29/423;H01L29/66 主分类号 H01L29/788
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