发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCTION THEREOF |
摘要 |
A silicon carbide semiconductor device having excellent electrical characteristics including channel mobility and a method for manufacturing the same are provided. The method for manufacturing a silicon carbide semiconductor device includes: an epitaxial layer forming step of preparing a semiconductor film of silicon carbide; a gate insulating film forming step of forming an oxide film on a surface of the semiconductor film; a nitrogen annealing step of performing heat treatment on the semiconductor film on which the oxide film is formed, in a nitrogen-containing atmosphere; and a post heat treatment step of performing, after the nitrogen annealing step, post heat treatment on the semiconductor film on which the oxide film is formed, in an atmosphere containing an inert gas. The heat treatment temperature (T2) in the post heat treatment step is higher than that (T1) in the nitrogen annealing step and lower than a melting point of the oxide film. |
申请公布号 |
EP2546867(A4) |
申请公布日期 |
2014.07.09 |
申请号 |
EP20110753286 |
申请日期 |
2011.03.04 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HIYOSHI, TORU;MASUDA, TAKEYOSHI;WADA, KEIJI |
分类号 |
H01L21/316;H01L21/336;H01L21/822;H01L27/04;H01L29/12;H01L29/78 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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