| 摘要 |
An inductively coupled plasma processing apparatus according to the present invention comprises a chamber, which forms a process space therein; a source coil, which is installed on an outer upper side of a dielectric window formed over the process space; a lead, which is installed on the source coil; a ground plate, which is installed between the source coil and the lead, has a plurality of mount holes, and is grounded; a variable capacitor, which penetrates through the mount hole to be mounted therein, is connected to the source coil to perform an impedance control, and is grounded to the ground plate. The inductively coupled plasma processing apparatus according to this invention finely controls operations of variable capacitors, which are coupled with the respective source coils to adjust impedances thereof to effectively control the impedances of the source coils by using a motor. Also, the variable capacitors are finely and automatically controlled. |
