发明名称 Single-cap via-in-pad and methods for forming thereof
摘要 Methods for the formation of single-cap VIPs in a substrate are described herein. The methods may include initially providing a substrate having a first and a second side, the first side being opposite of the second side. A via may then be constructed in the substrate, the via being formed within a via hole that extends from the first side to the second side of the substrate, the formed via having a first end located at the first side of the substrate, and a second end opposite the first end located at the second side of the substrate. A selective deposition may be performed of a conductive material on the second end of the via to form a conductive pad directly on the via on the second side of the substrate without depositing the conductive material onto the first side of the substrate.
申请公布号 US8772647(B1) 申请公布日期 2014.07.08
申请号 US201213443508 申请日期 2012.04.10
申请人 Marvell International Ltd 发明人 Chen Chien Te
分类号 H01K3/10;H05K1/11 主分类号 H01K3/10
代理机构 代理人
主权项 1. An apparatus, comprising: a substrate having a first side and a second side, wherein the first side of the substrate is opposite to the second side of the substrate; and a via-in-pad structure integrated with the substrate, wherein the via-in-pad structure includes a via formed within a hole that extends from the first side of the substrate to the second side of the substrate, wherein the via has i) a first end located at the first side of the substrate and ii) a second end opposite to the first end located at the second side of the substrate, and wherein the via comprises a plug material formed within the hole, anda cap comprising a first conductive material, wherein the first conductive material is disposed on the second end of the via subsequent to formation of the plug material within the hole, wherein the cap is configured to provide a conductive pad that is directly on the second end of the via, wherein the first end of the via is without a corresponding cap comprised of the first conductive material, wherein the hole is defined by one or more substrate walls, wherein the via comprises a second conductive material plated on the one or more substrate walls, wherein the substrate comprises a core that includes i) a first side corresponding to the first side of the substrate and ii) a second side that corresponds to the second side of the substrate, wherein the apparatus further comprises a trace pattern on the first side of the core, and wherein the trace pattern comprises each of the second conductive material and a third conductive material.
地址 Hamilton BM