| 摘要 |
Disclosed is an inductively coupled plasma processing apparatus to reduce impedance and improve the uniformity of a process for a whole surface of a substrate. The inductively coupled plasma processing apparatus according to the present invention includes a chamber in which a substrate is supported; a lid module which has a dielectric window facing the substrate and is coupled to the chamber; an antenna source part which has at least one antenna installed inside the lid module; an introduction part which is extended from the antenna and is connected to a high-frequency power supply line supplying high-frequency power to the antenna; and a ground part which is extended from at least one antenna among the antennas in a planar direction of the window and grounds the antennas. |
