PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a phase-change memory device and a manufacturing method thereof. The phase-change memory device according to the present invention comprises a first phase-change memory layer including a first lower electrode structure formed on the upper part of a semiconductor substrate; a first phase-change film formed on the upper part of the first lower electrode structure; a first upper electrode surrounding both sidewalls of the first phase-change film; and a second upper electrode formed on the upper part of the first phase-change film.