发明名称 |
SEMICONDUCTOR DEVICE WITH THROUGH SILICON VIA AND ALIGNMENT MARK |
摘要 |
A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor. |
申请公布号 |
US2014183705(A1) |
申请公布日期 |
2014.07.03 |
申请号 |
US201414196560 |
申请日期 |
2014.03.04 |
申请人 |
Elpida Memory, Inc. |
发明人 |
NAKAMURA Nobuyuki |
分类号 |
H01L23/544;H01L23/48 |
主分类号 |
H01L23/544 |
代理机构 |
|
代理人 |
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主权项 |
1. A semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface located opposite to each other in a thickness direction; a semiconductor element formed on the first surface of the semiconductor substrate; a through electrode penetrating the semiconductor substrate from the first surface to the second surface and electrically connected to the semiconductor element; a conductor penetrating the semiconductor substrate from the first surface to the second surface and not electrically connected to the semiconductor element; and an insulating separator penetrating the semiconductor substrate from the first surface to the second surface and formed in a shape of a ring surrounding the conductor. |
地址 |
Chuo-ku JP |