发明名称 POWER CELL, POWER CELL CIRCUIT FOR A POWER AMPLIFIER AND A METHOD OF MAKING AND USING A POWER CELL
摘要 A power cell including an isolation region having a first dopant type formed in a substrate. The power cell further includes a bottom gate having a second dopant type different from the first dopant type formed on the isolation region and a channel layer having the first dopant type formed on the bottom gate. The power cell further includes source/drain regions having the first dopant type formed in the channel layer and a first well region having the second dopant type formed around the channel layer and the source/drain regions, and the first well region electrically connected to the bottom gate. The power cell further includes a second well region having the first dopant type formed around the channel layer and contacting the isolation region and a gate structure formed on the channel layer.
申请公布号 US2014184275(A1) 申请公布日期 2014.07.03
申请号 US201313753995 申请日期 2013.01.30
申请人 YEH Tzu-Jin;JOU Chewn-Pu;JIN Jun-De 发明人 YEH Tzu-Jin;JOU Chewn-Pu;JIN Jun-De
分类号 H01L27/06;H03K17/06;H01L29/66 主分类号 H01L27/06
代理机构 代理人
主权项 1. A power cell comprising: an isolation region having a first dopant type in a substrate; a bottom gate having a second dopant type different from the first dopant type on the isolation region; a channel layer having the first dopant type on the bottom gate; source/drain regions having the first dopant type on the channel layer; a first well region having the second dopant type around the channel layer and the source/drain regions, and the first well region electrically connected to the bottom gate; a second well region having the first dopant type around the channel layer and contacting the isolation region; and a gate structure on the channel layer.
地址 Hsinchu City TW