发明名称 |
POWER CELL, POWER CELL CIRCUIT FOR A POWER AMPLIFIER AND A METHOD OF MAKING AND USING A POWER CELL |
摘要 |
A power cell including an isolation region having a first dopant type formed in a substrate. The power cell further includes a bottom gate having a second dopant type different from the first dopant type formed on the isolation region and a channel layer having the first dopant type formed on the bottom gate. The power cell further includes source/drain regions having the first dopant type formed in the channel layer and a first well region having the second dopant type formed around the channel layer and the source/drain regions, and the first well region electrically connected to the bottom gate. The power cell further includes a second well region having the first dopant type formed around the channel layer and contacting the isolation region and a gate structure formed on the channel layer. |
申请公布号 |
US2014184275(A1) |
申请公布日期 |
2014.07.03 |
申请号 |
US201313753995 |
申请日期 |
2013.01.30 |
申请人 |
YEH Tzu-Jin;JOU Chewn-Pu;JIN Jun-De |
发明人 |
YEH Tzu-Jin;JOU Chewn-Pu;JIN Jun-De |
分类号 |
H01L27/06;H03K17/06;H01L29/66 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
1. A power cell comprising:
an isolation region having a first dopant type in a substrate; a bottom gate having a second dopant type different from the first dopant type on the isolation region; a channel layer having the first dopant type on the bottom gate; source/drain regions having the first dopant type on the channel layer; a first well region having the second dopant type around the channel layer and the source/drain regions, and the first well region electrically connected to the bottom gate; a second well region having the first dopant type around the channel layer and contacting the isolation region; and a gate structure on the channel layer. |
地址 |
Hsinchu City TW |