| 主权项 |
1. An avalanche photodiode-type semiconductor structure configured to receive electromagnetic radiation in a given wavelength and comprising:
a first semiconductor zone, called an absorption zone, with a first type of conductivity having a first longitudinal face intended to receive the electromagnetic radiation and a second face opposite the first face, said first zone being made of mercury-cadmium telluride of the CdxHg1-xTe type with a cadmium proportion x that is varied, at least one second semiconductor zone, called a multiplication zone, in contact on a first longitudinal face with the second face of the first zone, the second zone having a majority carrier concentration lower than that of the first zone, said second zone being adapted so as to provide a multiplication of carriers by impact ionization, a third semiconductor zone, called a collection zone, in contact with the second zone, said third zone having a second type of conductivity opposite the first type of conductivity and having a majority carrier concentration higher than that of the second semiconductor zone, wherein the first zone comprises a doping element providing at least one majority carrier corresponding to the first type of conductivity, of which the concentration is varied alternately in a direction substantially perpendicular to the first longitudinal face between a so-called low concentration and a so-called high concentration. |
