Field-effect transistor, single-electron transistor and sensor

摘要

A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.

主权项

1. A sensor for detecting a detection target, the sensor comprising:
a transistor selected from the group of field-effect transistors or single-electron transistors, the transistor having
a substrate having a first side and a second side, the second side being opposed to the first side, the substrate being formed of an insulating material,a source electrode disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, anda carbon nano tube channel forming a current path between the source electrode and the drain electrode, the channel being spaced from the substrate and bridging over the substrate from a first end point on the source electrode to a second end point on the drain electrode;a interaction-sensing gate disposed on the second side of the entire substrate, the interaction-sensing gate immobilizing a specific substance that is capable of selectively interacting with the detection target, the interaction-sensing gate being formed of a conductor;a gate for applying a gate voltage to adjust a characteristic of the transistors; wherein the gate is a side gate disposed on the side of the channel on the first side of the substrate; wherein the detection target changes the characteristic of the transistor when interacting with the specific substance.