Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

摘要

An electrical device in which an interface layer comprising arsenic is disposed between and in contact with a conductor and a semiconductor. In some cases, the interface layer may be a monolayer of arsenic.

主权项

1. An electrical junction comprising an interface layer disposed between a contact metal and a group IV semiconductor, the semiconductor comprising a source or drain of a transistor, the interface layer comprising a metal oxide and configured to reduce a height of a Schottky barrier between the contact metal and the semiconductor from that which would exist at a contact junction between the contact metal and the semiconductor without the interface layer disposed therebetween, and wherein the electrical junction has a specific contact resistance of less than or equal to approximately 10 Ω-μm2.