发明名称 Semiconductor modules and methods of formation thereof
摘要 In accordance with an embodiment of the present invention, a semiconductor module includes a first semiconductor device having a first plurality of leads including a first gate/base lead, a first drain/collector lead, and a first source/emitter lead. The module further includes a second semiconductor device and a circuit board. The second semiconductor device has a second plurality of leads including a second gate/base lead, a second drain/collector lead, and a second source/emitter lead. The circuit board has a plurality of mounting holes, wherein each of the first plurality of leads and the second plurality of leads is mounted into a respective one of the plurality of mounting holes. At the plurality of mounting holes, a first distance from the first gate/base lead to the second gate/base lead is different from a second distance from the first source/emitter lead to the second source/emitter lead.
申请公布号 US8766430(B2) 申请公布日期 2014.07.01
申请号 US201213517654 申请日期 2012.06.14
申请人 Infineon Technologies AG 发明人 Otremba Ralf;Chiola Davide;Griebl Erich;Brucchi Fabio
分类号 H01L23/48 主分类号 H01L23/48
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A semiconductor module comprising: a first semiconductor device having a first plurality of leads including a first gate/base lead, a first drain/collector lead, and a first source/emitter lead; a second semiconductor device having a second plurality of leads including a second gate/base lead, a second drain/collector lead, and a second source/emitter lead; and a circuit board having a plurality of mounting holes, wherein each of the first plurality of leads and the second plurality of leads is mounted into a respective one of the plurality of mounting holes, wherein, at the plurality of mounting holes, a first distance from the first gate/base lead to the second gate/base lead is different from a second distance from the first source/emitter lead to the second source/emitter lead.
地址 Neubiberg DE