Multi-landing contact etching

摘要

A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a second die area having the top dielectric, a hard mask, and a gate electrode. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is deposited. A photosensitive material is patterned to generate a third opening in the photosensitive material over the semiconductor contact and a fourth opening inside the gate contact area. The ILD is etched through to reopen the semiconductor contact while etching through the ILD and residual hard mask if present to provide a gate contact to the gate electrode.

主权项

1. A method for contacting a metal-oxide-semiconductor (MOS) device, comprising:
patterning a first photosensitive material using a first contact mask to generate a first opening in said first photosensitive material over a semiconductor surface of a substrate having a top dielectric thereon in a first die area, and a second opening over a gate stack in a second die area having said top dielectric on a hard mask layer on a gate electrode; etching through said top dielectric layer exposed by said first opening to form a semiconductor contact in said semiconductor surface while etching at least a portion of a thickness of said hard mask layer over a gate contact area exposed by said second opening; depositing an inter-layer dielectric (ILD); patterning a second photosensitive material over said ILD using a second contact mask to generate a third opening in said second photosensitive material over said semiconductor contact and a fourth opening inside said gate contact area, and etching through said ILD to reopen said semiconductor contact while etching through said ILD to provide a gate contact to said gate electrode.