| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dummy gate on the substrate; forming a contact etch stop layer on the dummy gate and the substrate; performing a planarizing process to partially remove the contact etch stop layer; partially removing the dummy gate; and performing a thermal treatment on the contact etch stop layer. |
| 申请公布号 |
US8765561(B2) |
申请公布日期 |
2014.07.01 |
| 申请号 |
US201113154396 |
申请日期 |
2011.06.06 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Hung Wen-Han;Chen Tsai-Fu;Lo Ta-Kang;Cheng Tzyy-Ming |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate; forming a dummy gate on the substrate; forming a contact etch stop layer on the dummy gate and the substrate, wherein the contact etch stop layer comprises a tensile stress layer; forming an interlayer dielectric layer on the tensile stress layer; performing a planarizing process to partially remove the interlayer dielectric layer and the contact etch stop layer; partially removing the dummy gate; and after removing the dummy gate, performing a thermal treatment on both the contact etch stop layer and the interlayer dielectric layer. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
