发明名称 |
Capacitive fingerprint sensor |
摘要 |
The capacitive fingerprint sensor according to the exemplary embodiments of the present invention includes: a fingerprint sensing electrode Cfp for sensing a human fingerprint; a first transistor T1 in which the amount of currents flowing therethrough changes depending on an output voltage of the fingerprint sensing electrode Cfp; a second transistor T2 in which the amount of currents flowing therethrough changes due to a difference between the currents flowing through the first transistor T1; and a third transistor T3 which resets a gate electrode of the first transistor T1 and provides capacitive coupling with the gate electrode of the first transistor T1 via a pulse signal. |
申请公布号 |
US8766651(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201213556551 |
申请日期 |
2012.07.24 |
申请人 |
Silicon Display Technology |
发明人 |
Kang Moon Hyo;Hur Ji Ho |
分类号 |
G01R27/26 |
主分类号 |
G01R27/26 |
代理机构 |
Stevens & Showalter, LLP |
代理人 |
Stevens & Showalter, LLP |
主权项 |
1. A capacitive fingerprint sensor comprising:
a fingerprint sensing electrode Cfp for sensing a human fingerprint; a first transistor T1 electrically coupled with the fingerprint sensing electrode Cfp such that a first amount of current flowing through the first transistor varies based on an output voltage of the fingerprint sensing electrode; a second transistor T2 electrically coupled with the first transistor T1 such that a second amount of current flowing through the second transistor T2 varies based on the first amount of current flowing through the first transistor T1; and a third transistor T3 electrically coupled with the first transistor T1 which resets a gate electrode of the first transistor T1 and provides capacitive coupling with the gate electrode of the first transistor T1 via a pulse signal. |
地址 |
KR |