| 摘要 |
PROBLEM TO BE SOLVED: To provide a TEG used in evaluation of a field-effect transistor capable of preventing a gate insulating film of a field-effect transistor forming the TEG from suffering damage by an electric charge caused by a plasma process.SOLUTION: An anode of a protection diode DP is connected to a gate electrode of a MOSFET QU for evaluation via a p-channel-type MOSFET QP, and the MOSFET QU is evaluated using a TEG in which a cathode of a protection diode DN is connected to the gate electrode of the MOSFET QU via an n-channel-type MOSFET QN. |
