SEMICONDUCTOR MAGNETIC FIELD SENSORS

摘要

A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.

主权项

1. A semiconductor magnetic field sensor comprising:
a semiconductor well on top of a substrate layer, comprising:
a first current collecting region and a second current collecting region, anda current emitting region placed between the first current collecting region and the second current collecting region, a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region, a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region,wherein, in operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current, wherein the deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field, wherein the first and second currents flow in the semiconductor well from the current emitting region to the first current collecting region and the second current collecting region, and wherein a difference between the first current and the second current is dependent on the magnetic field.