TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

A field effect transistor is provided. The transistor includes: an active layer and a capping layer which are successively stacked on a substrate; a source ohmic electrode and a drain ohmic electrode which are separated from each other on the capping layer; and a gate electrode which is arranged on the substrate between the source ohmic electrode and the drain ohmic electrode, penetrates the capping layer, and is connected to the active layer. The gate electrode includes a leg part which has a narrow width and is connected to the active layer, and the head part which has a wider width compared to the leg part and is located on the leg part. The leg part of the gate electrode on both end parts of the gate electrode in a direction of extending the gate electrode is narrower than the head part of the gate electrode of the residual part, and is wider than the leg part.