发明名称 |
OXIDE SINTERED BODY, SPUTTERING TARGET USING THE SAME AND OXIDE FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide an oxide sintered body for a sputtering target to which a specific element can be added from an n-type semiconductor layer to a p-type semiconductor layer surface of a compound thin-film solar cell.SOLUTION: There is provided an oxide sintered body which contains zinc and at least one type of element (X) (provided that a case where magnesium only is added is excluded) which has an ionization potential (Ip) of 4.5 eV≤Ip≤8.0 eV and an atomic radius (d) of 1.20Å≤d≤2.50Å or less, and further has a composition ratio (atomic ratio) of 0.0001≤X/(Zn+X)≤0.20 and a sintered density of 95% or more. |
申请公布号 |
JP2014114207(A) |
申请公布日期 |
2014.06.26 |
申请号 |
JP20130238195 |
申请日期 |
2013.11.18 |
申请人 |
TOSOH CORP |
发明人 |
AKIIKE RYO;KURAMOCHI TOSHIHITO;TAMANO KIMIAKI |
分类号 |
C04B35/453;C23C14/34;H01L31/06 |
主分类号 |
C04B35/453 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|