发明名称 OXIDE SINTERED BODY, SPUTTERING TARGET USING THE SAME AND OXIDE FILM
摘要 PROBLEM TO BE SOLVED: To provide an oxide sintered body for a sputtering target to which a specific element can be added from an n-type semiconductor layer to a p-type semiconductor layer surface of a compound thin-film solar cell.SOLUTION: There is provided an oxide sintered body which contains zinc and at least one type of element (X) (provided that a case where magnesium only is added is excluded) which has an ionization potential (Ip) of 4.5 eV≤Ip≤8.0 eV and an atomic radius (d) of 1.20Å≤d≤2.50Å or less, and further has a composition ratio (atomic ratio) of 0.0001≤X/(Zn+X)≤0.20 and a sintered density of 95% or more.
申请公布号 JP2014114207(A) 申请公布日期 2014.06.26
申请号 JP20130238195 申请日期 2013.11.18
申请人 TOSOH CORP 发明人 AKIIKE RYO;KURAMOCHI TOSHIHITO;TAMANO KIMIAKI
分类号 C04B35/453;C23C14/34;H01L31/06 主分类号 C04B35/453
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