SEMICONDUCTOR DEVICES INCLUDING A RESISTOR STRUCTURE AND METHODS OF FORMING THE SAME

摘要

Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.

主权项

1. A semiconductor device comprising:
an active region and a field region in a substrate; a gate structure on the active region; a resistor structure on the field region; a first interlayer insulating layer on the gate structure and the resistor structure; a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure; a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug; and a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure, wherein the resistor contact plug is spaced apart from the resistor trench plug.