Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer

摘要

A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the resistive switching film and methods of forming the same. The nonvolatile memory element includes a first electrode layer, a second electrode layer, and a resistive switching layer disposed between the first electrode layer and the second electrode layer. The resistive switching layer comprises a first sub-layer and a second sub-layer, wherein the first sub-layer has more defects than the first sub-layer. A method includes forming a first sub-layer on the first electrode layer by a first ALD process and forming a second sub-layer on the first sub-layer by a second ALD process, where the first sub-layer has a different amount of defects than the second sub-layer.

主权项

1. A method of forming a resistive switching layer over a first electrode layer, the method comprising:
forming a first sub-layer on the first electrode layer by a first ALD process,
wherein the first ALD process controls an average concentration of defects in the first sub-layer; and forming a second sub-layer on the first sub-layer by a second ALD process
wherein the second ALD process controls an average concentration of defects in the second sub-layer, andwherein the average concentration of defects in the first sub-layer is different than the average concentration of defects in the second sub-layer.