| 摘要 |
The invention relates to a conductive support for an OLED, comprising: a dielectric sub-layer having an optical thickness L1 larger than 20 nm and smaller than 180 nm, comprising a first crystalline contact layer made from zinc oxide and preferably doped; a first silver layer having a thickness smaller than 20 nm; a separating dielectric layer having a given optical thickness L2 larger than 80 nm and smaller than 280 nm, comprising, in this order: a zinc layer, having a thickness e2 and preferably doped, directly on the first silver layer; an optional amorphous layer made from tin and zinc oxide, or made from indium and zinc oxide, or made from indium, zinc and tin oxide, having a thickness e smaller than 15 nm; a second layer of zinc oxide having a thickness ec2, the sum of the thicknesses eC2+e2 being at least 30 nm; a second silver layer having a thickness smaller than 20 nm; a metal overlying blocking layer having a thickness smaller than 3 nm; and a dielectric, electrically conductive overlying layer. |
