| 发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY |
| 摘要 |
A nonvolatile semiconductor memory according to an embodiment includes: a semiconductor region; a first insulating film formed on the semiconductor region; a charge storage film formed on the first insulating film; a hydrogen diffusion preventing film formed on the charge storage film; a second insulating film formed on the hydrogen diffusion preventing film; a control gate electrode formed on the second insulating film; a hydrogen discharge film formed on the control gate electrode; and a sidewall formed on a side surface of a multilayer structure including the first insulating film, the charge storage film, the hydrogen diffusion preventing film, the second insulating film, and the control gate electrode, the sidewall containing a material for preventing hydrogen from diffusing. |
| 申请公布号 |
US2014167133(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201314108633 |
申请日期 |
2013.12.17 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIRANO Izumi;Mitani Yuichiro;Miyata Masayasu;Nakasaki Yasushi;Kato Koichi;Matsushita Daisuke;Takashima Akira;Morota Misako |
| 分类号 |
H01L29/788;H01L29/792 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A nonvolatile semiconductor memory comprising:
a semiconductor region; a first insulating film formed on the semiconductor region; a charge storage film formed on the first insulating film; a hydrogen diffusion preventing film formed on the charge storage film; a second insulating film formed on the hydrogen diffusion preventing film; a control gate electrode formed on the second insulating film; a hydrogen discharge film formed on the control g electrode; and sidewalls formed on side surfaces of a multilayer structure including the first insulating film, the charge storage film, the hydrogen diffusion preventing film, the second insulating film, and the control gate electrode, the sidewalls containing a material for preventing hydrogen from diffusing.
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| 地址 |
Tokyo JP |
