| 摘要 |
The present invention relates to a silicon carbide structure for a plasma etching apparatus, and relates to an SiC structure applied to an interior of a plasma etching apparatus in which the SiC structure has a plate shape or a ring shape obtained by depositing SiC on a graphite disk to form an SiC layer and processing the SiC layer, a surface of the SiC layer contacting the graphite disk is a base surface, and an opposite surface of the base surface is a growth surface. According to the present invention, after SiC is deposited on a graphite plate through chemical vapor deposition and an SiC structure is manufactured, a base surface having small particles are installed in a direction in which the particles contact plasma when the SiC structure is applied to a plasma etching apparatus, so that a structure in which a growth surface having relatively large particles contact plasma can have a more uniform etching tendency and a life span of the plasma can be extended. |
